P-type metal oxide semiconductors have emerged as materials of significant interest in the low-power electronics industry due to their good stability and low off-state current. Their potential applications span a wide array of technologies, including transistors, transparent electronics, display systems, and photovoltaic devices. Our research is dedicated to overcoming the limitations induced by the localization of the valence band maximum (VBM). Thus, it mainly focuses on enhancing the hole mobility and bandgap controllability of p-type materials, such as tellurium oxide (TeOx).