[Abstract]

Metal halide perovskite semiconductors have attracted considerable attention because they enable the development of devices with exceptional optoelectronic and electronic properties via cost-efective and highthroughput chemical solution processes. However, challenges persist in the solution processing of perovskite flms, including limited control over crystallization and the formation of defective deposits, leading to suboptimal device performance and reproducibility. Tin (Sn2+) halide perovskite holds promise for achieving high-performance thin-flm transistors (TFTs) due to its intrinsic high hole mobility. Nevertheless, reliable production of high-quality Sn2+ perovskite flms remains challenging due to the rapid crystallization compared with more extensively studied lead (Pb)-based materials. Recently, composition engineering has emerged as a mature and efective strategy for realizing the high-yield fabrication of Sn2+ halide perovskite thin flms. This approach cannot only achieve improved TFT performance with high hole mobilities and current ratios1–6 , but also enable reliable device operation with hysteresis-free character and long-term stability7–12. Here we provide the experimental procedure for precursor preparation, flm and device fabrication and characterization. The entire process typically takes 20–24 h. This protocol requires a basic understanding of metal halide perovskites, perovskite flm coating process, standard TFT fabrication and measurement techniques.