Topic 01
Metal halide perovskite semiconductors have demonstrated outstanding performance in optoelectronic devices such as solar cells, LEDs, and transistors, thanks to their excellent properties and ease of processing. In particular, they offer new possibilities for implementing CMOS circuits through low-cost, low-temperature processes, addressing the growing demand for high-mobility p-type semiconductors.
Topic 02
P-type metal oxide semiconductors have emerged as materials of significant interest in the low-power electronics industry due to their good stability and low off-state current. Their potential applications span a wide array of technologies, including transistors, transparent electronics, display systems, and photovoltaic devices. However, in contrast to the superior electrical performance of n-type metal oxides, the involvement of the oxygen 2p orbital in p-type counterparts leads to localization of the valence band maximum (VBM). This electronic characteristic results in reduced hole mobility within p-type semiconductors. Our research is dedicated to enhancing hole mobility and optimizing the on/off current ratio in p-type materials to overcome these limitations.
Topic 03
2D semiconductors exhibit unique characteristics that make them highly promising for next-generation electronic devices. With atomically thin layers, they enable excellent gate control even at ultra-short channel lengths, supporting continued transistor miniaturization. Their dangling-bond-free surfaces minimize interface trap states, allowing for high carrier mobility and low contact resistance, essential for improved device performance. Additionally, 2D semiconductors offer tunable electronic properties, such as adjustable bandgaps depending on layer thickness. Our research focuses on their potential for integration into flexible electronics, low-power devices, and 3D monolithic structures, highlight 2D semiconductors as a transformative material for future semiconductor technology.
Nature protocols (2025)
2025Nature, 629, 798–802 (2024)
2024Nature Electronics, 6, 559–571 (2023)
2023