[Abstract]

Solution-processed tin (Sn²⁺)-halide perovskites can be used to create p-channel thin-flm transistors (TFTs) with performance levels comparable with commercial low-temperature polysilicon technology. However, high-quality perovskite flm deposition using industry-compatible production techniques remains challenging. Here we report the fabrication of p-channel Sn²⁺-halide perovskite TFTs using a thermal evaporation approach with inorganic caesium tin iodide (CsSnI₃). We use lead chloride (PbCl₂) as a reaction initiator that triggers solid-state reactions of the as-evaporated perovskite compounds. This promotes the conversion of dense and uniform perovskite flms, and also modulates the intrinsically high hole density of the CsSnI₃ perovskite channels. Our optimized TFTs exhibit average hole feld-efect mobilities of around 33.8 cm²  V⁻¹ s⁻¹, on/of current ratios of around 108, and large-area fabrication uniformity. The devices also exhibit improved stability compared with solution-deposited devices.