Roadmap on metal-halide perovskite semiconductors and devices
- 저자
- Ao Liu , Jun Xi , Hanlin Cen , Jinfei Dai , Yi Yang , Cheng Liu , Shuai Guo , Xiaofang Li , Xiaotian Guo , Feng Yang , Meng Li , Haoxuan Liu , Fei Zhang , Huagui Lai , Fan Fu , Shuaifeng Hu , Junke Wang , Seongrok Seo , Henry J. Snaith , Jinghui Li , Jiaj
- 저널명
- Materials Today Electronics, 100138 (2025)
- 년도
- 2025
- Link
- https://doi.org/10.1016/j.mtelec.2025.100138 139회 연결
[Abstract]
Metal-halide perovskites are emerging as promising semiconductors for next-generation (opto)electronics. Due to their excellent optoelectronic and physical properties, as well as their processing capabilities, the past decades have seen significant progress and success in various device applications, such as solar cells, photodetectors, light-emitting diodes, and transistors. Despite their performance now rivaling or surpassing that of silicon counterparts, halide-perovskite semiconductors still face challenges for commercialization, particularly in terms of toxicity, stability, reliability, reproducibility, and lifetime. In this Roadmap, we present comprehensive discussions and perspectives from leading experts in the perovskite research community, covering various perovskite (opto)electronics, fundamental material properties and fabrication methods, photophysical characterizations, computing science, device physics, and the current challenges in each field. We hope this article provides a valuable resource for researchers and fosters the development of halide perovskites from basic to applied science.
- 이전글Back-End-of-Line-Compatible Passivation of Sulfur Vacancies in MoS2 Transistors Using Electron-Withdrawing Benzenethiol 25.02.18
- 다음글Effects of high capacitance of solution-processed polymer heterojunction gate dielectrics on the contact resistance of low-voltage n-channel organic transistor 25.02.05