High-performance p-type oxides are essential for complementary metal oxide semiconductor (CMOS), 3D integration and flexible electronics, yet conventional oxides suffer from intrinsically poor hole transport owing to localized O 2p bands. The semimetal-in-oxide design embeds high-mobility tellurium (Te) nanodomains within an amorphous oxide matrix, offering superior mobility, stability and uniformity with compatibility for low-temperature processing. This gives p-type oxides potential applications in neuromorphic computing, broadband photodetectors, and energy-efficient edge electronic systems. Nonetheless, challenges remain, including suppression of off currents, defect control, thermal stability and homogeneous CMOS integration.