[Abstract]

Tin-based halide perovskites garner attention as a promising semiconductinglayer material for field-effect transistors (FETs) owing to their lower effective massthan their lead-based counterparts. However, they suffer from low ambientstability because Sn 2þ is readily oxidized to Sn 4þ in air. To address this issue,Ruddlesden–Popper (RP) perovskites featuring large organic cations emerge aspromising materials for FETs. In this article, a comprehensive overview of theproperties and advantages of RP-phase tin-based halide perovskites used in FETsare provided. Recent advancements in 2D and 2D/3D RP tin-based perovskiteFETs are examined, and challenges related to the fabrication of uniform large-areafilms and strategies for improving ambient stability and operational durability arediscussed. In this review article, the potential of RP perovskites for FETapplications is emphasized and the need for further research to unlock their fullpotential is highlighted.