[Abstract]

Over the past decade, n -type metal-oxide semiconductors have achieved great success in advanced displays and a wide range of optoelectronic devices owing to their low cost, excellent electron transport property, high optical transparency, and outstanding stability. Current attention has extended to the development of comparable p -type candidates. This chapter provides a recent progress overview in solution-synthesized inorganic p -type semiconductors and their applications as channel layers in thin-film transistors. The first part focuses on the conventional oxide semiconductors, and the following section highlights the emerging p -type (pseudo)halide materials for realizing transparent, high-performance, and low-temperature printable electronics and circuits.