Impact of Humidity on the Performance and Stability of Solution-Processed Copper Oxide Transistors
- 저자
- Huihui Zhu, Ao Liu, Yong-Young Noh*
- 저널명
- IEEE Electron Device Letters, 41, 7, 1033-1035 (2020)
- 년도
- 2020
- Link
- https://doi.org/10.1109/LED.2020.2993324 168회 연결
[Abstract]
We found that during spin-coating and annealing processes, the ambient humidity can have obvious impact on the characteristics of p-channel copper oxide thin-film transistors (TFTs). We studied such impact in great details along with the device operational stability. A dry deposition atmosphere (relative humidity, RH ≤ 20%) is necessary for the best device performance, including a hole mobility of 0.1 cm 2 V -1 s -1 , an on/off current ratio of >104, and high operational stability (<; 2 V threshold voltage shift after 5.5 h of bias stress), attributable to residues with fewer hydroxide defects. These findings offer a clear inspiration for achieving-highly stable and reproducible p-channel oxide TFTs through a low-cost solution process.