Publication

Semiconductor Materials and Devices Lab

Paper

  • 2023
  • Neuromorphic computing based on halide perovskites
  • Nature Electronics, 6, 949–962 (2023)
  • Maria Vasilopoulou*, Abd Rashid bin Mohd Yusoff*, Yang Chai, Michael-Alexandros Kourtis, Toshinori Matsushima, Nicola Gasparini, Rose Du, Feng Gao, Mohammad Khaja Nazeeruddin, Thomas D Anthopoulos*, Yong-Young Noh*
Organic nano-floating-gate transistor memory with metal nanoparticles
저자
Luu Tho, Kang-Jun Baeg, Yong-Young Noh*
저널명
Nano Convergence, 3, 10 (2016)
년도
2016

[Abstract]

Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices. In this review, recent advances in the classes of nano-floating-gate OFET memory devices using metal nanoparticles as charge-trapping sites are briefly reviewed. Details of device fabrication, characterization, and operation mechanisms are reported based on recent research activities reported in the literature.