Remarkable Enhancement of Hole Transport in Top-Gated N-Type Polymer Field-Effect Transistors by a High-k Dielectric for Ambipolar Electronic Circuits
- 저자
- Kang-Jun Baeg*, Dongyoon Khim, Soon-Won Jung, Minji Kang, In-Kyu You, Dong-Yu Kim, Antonio Facchetti*, and Yong-Young Noh*
- 저널명
- Advanced Materials, 24, 40, 5433-5439 (2012)
- 년도
- 2012
- Link
- http://dx.doi.org/10.1002/adma.201201464 155회 연결
[Abstract]
A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V−1 s−1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.