[Abstract]

Silver (Ag) metal electrode having 20 μm channel length was printed by reverse offset printing (ROP) using nano-silver paste ink for the source/drain of organic thin-film transistors (OTFT). Specific resistance and surface roughness of printed Ag electrodes with increasing curing temperature were investigated, and surface morphology and grain growth mechanism were systematically verified using a scanning electron microscope (SEM) and atomic force microscope (AFM) in order to obtain an optimized ROP Ag electrode. The Ag electrode was applied to fabricate top-gate/bottom-contact poly(3-hexylthiophene) OTFT devices, which showed reproducible OTFT characteristics such as the field-effect mobility, threshold voltage, and an on/off-current ratio of ∼10−3 cm2/Vs, 0.36 V, and ∼102, respectively.