[Abstract]

Here, we report on a pentacene-based, nonvolatile transistor memory device with poly(4-vinyl phenol) (PVP):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) nano-composite films as the charge storage site. Incorporation of PCBM molecules into PVP dielectric materials as charge storage sites for electrons resulted in a reversible shift in the threshold voltage (VTh) and reliable memory characteristics. The characteristics of the pentacene memory device were as follows: a relatively high field-effect mobility (µFET) (0.2–0.3 cm2 V-1 s-1) with a large memory window (ca. 20 V), a high on/off ratio (∼104) during writing and erasing with application of an operating gate voltage of 60 V for a short duration time (∼1 ms), and a retention time of about 40 h.