Low-Voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoride-trifluoroethylene)/poly(methyl methacrylate dielectrics)
- 저자
- Soon-Won Jung, Kang-Jun Baeg, Sung-Min Yoon, In-Kyu You, Jong-Keum Lee, Young-Soon Kim, and Yong-Young Noh*
- 저널명
- Journal of Applied Physics, 11, 3, S213-S218 (2010)
- 년도
- 2010
- Link
- https://doi.org/10.1016/j.cap.2011.01.011 122회 연결
[Abstract]
We report a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/poly(vinylidene fluoride) (PVDF)blended film as a high-capacitance polymer-gate dielectric layer for a low-voltage-operated top-gate organic field-effect transistor (OFET). OFETs with poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as an active layer exhibited a low operation gate voltage of less than 10 V with a reasonable field-effect mobility of 10 4 cm2/V for amorphous conjugated polymers. The operation voltage effectively decreased because of the high permittivity of the P(VDF-TrFE)/(PVDF)- blended film (e ¼ 10.2). The remnant polarization disappeared completely; further, the hysteresis in the transfer plots induced by the ferroelectric P(VDF-TrFE) was effectively minimized by the disruption of a crystalline b-phase in the film via an increase in the blend ratio of PVDF