Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
- 저자
- Lars Herlogsoon, Yong-Young Noh, Ni Zhao, Xavier Crispin, Henning Sirringhaus* and Magnus Berggren*
- 저널명
- Advanced Materials, 20, 24, 4708-4713 (2008)
- 년도
- 2008
- Link
- http://www.dx.doi.org/10.1002/adma.200801756 117회 연결
[Abstract]
A polyelectrolyte is used as gate insulator material in organic field-effect transistors with self-aligned inkjet printed sub–micrometer channels. The small separation of the charges in the electric double layer at the electrolyte-semiconductor interface, which builds up in tens of microseconds, provides a very high transverse electric field in the channel that effectively suppresses short-channel effects at low applied gate voltages.