Perfluorocyclobutane containing polymeric gate dielectric for organic thin film transistors with high on/off ratio
- 저자
- Jieun Ghim, Kang-Jun Baeg, Yong-Young Noh,. Seok-Ju Kang, Jang Jo, Dong-Yu Kim, Shinuk Cho, Jonathan Yuen, Kwanghee Lee, Alan J. Heeger
- 저널명
- Applied Physics Letters, 89, 202516 (2006)
- 년도
- 2006
- Link
- https://doi.org/10.1063/1.2390663 104회 연결
[Abstract]
Athermally cross-linkable perfluorocyclobutane PFCBpolymer was synthesized and examined for use as the gate dielectric in organic thin film transistors OTFTs . The PFCB polymer showed good solvent and process resistance during the photolithographic patterning of the electrodes. Bottom contact OTFTs were fabricated with poly3-hexylthiophene-2,5-diyl P3HT as the semiconductor, either spin cast or dip coated, on the PFCB gate dielectric. OTFTs fabricated with dip-coated P3HT showed a field effect mobility of 1.8 10−3 cm2/V s and a high on/off current ratio of 8.3 106 in the saturation regime, with a source-drain voltage of VD=−50 V