Publication

Semiconductor Materials and Devices Lab

Paper

  • 2023
  • Neuromorphic computing based on halide perovskites
    • Nature Electronics, 6, 949–962 (2023)
  • Maria Vasilopoulou*, Abd Rashid bin Mohd Yusoff*, Yang Chai, Michael-Alexandros Kourtis, Toshinori Matsushima, Nicola Gasparini, Rose Du, Feng Gao, Mohammad Khaja Nazeeruddin, Thomas D Anthopoulos*, Yong-Young Noh*
A Lewis base and boundary passivation bifunctional additive for high performance lead-free layered-perovskite transistors and phototransistors
저자
Huihui Zhu, Ao Liu, Taoyu Zou, Haksoon Jung, Seongmin Heo, Yong-Young Noh*
저널명
Materials Today Energy, 21, 100722 (2021)
년도
2021
[Abstract]
Halide perovskite semiconductors exhibit a low intrinsic effective mass of charge carriers; however, their development of transistors is lagging far behind the development of photovoltaic and light-emitting diodes. In this study, we report highly reproducible phenethylammonium tin iodide transistors with mobility over 4 cm2 V−1 s−1 and an on/off ratio over 105 using a simple method of adding a bifunctional additive, urea, into the precursor. This non-volatile Lewis base can modify the crystallization speed and passivate grain-boundary defects, enabling a significant improvement in the transistor characteristics over pristine devices without urea. Furthermore, we demonstrate unprecedented phototransistor characteristics, with detectivity exceeding 1017 Jones when the improved perovskite transistors are used. It is expected that more intensive efforts can be attracted to advance the development of high-performance perovskite (photo)transistors.