[Abstract]

Here, we report the fabrication of high-performance printable WSe₂ transistors via the doping of p-type FeCl₃ molecules (hole mobility: ∼ 1.5 cm² V⁻¹ s⁻¹ ; on/off ratio: ∼ 106 ). A complementary inverter is demonstrated with p-WSe₂ and n-MoS₂ transistors, which highlights its potential for application in future two-dimensional material-based printable electronics