[Abstract]

Two-dimensional (2D) tin-based perovskites have gained considerable attention for use in diverse optoelectronic applications, such as solar cells, lasers, and thin-film transistors (TFTs), owing to their good stability and optoelectronic properties. However, their intrinsic charge-transport properties are limited and the insulating bulky organic ligands hinder the achievement of high-mobility electronics. Blending three-dimensional (3D) counterparts into 2D perovskites to form 2D/3D hybrid structures is a synergistic approach that combines the high mobility and stability of 3D and 2D perovskites, respectively. In this study, a reliable p-channel 2D/3D tin-based hybrid perovskite TFTs comprising 3D formamidinium tin iodide (FASnI3) and 2D fluorinated 4-fluoro-phenethylammonium tin iodide ((4-FPEA)2SnI4) are reported. The optimized FPEA-incorporated TFTs show a high hole mobility of 12 cm2 V-1 s-1, an on/off current ratio of over 108, and a subthreshold swing of 0.09 V dec-1 with negligible hysteresis. This excellent p-type characteristic is compatible with n-type metal-oxide TFT for constructing complementary electronics. Two procedures of antisolvent engineering and device patterning are further proposed to address the key concern of low-performance reproducibility of perovskite TFTs. This study provides an alternative A-cation engineering method for achieving high-performance and reliable tin-halide perovskite electronics.