[Abstract]

Tin (Sn²⁺)-based halide perovskites have been developed as the most promising alternatives to their toxic Pb-based counterparts in optoelectronic devices. However, the facile tin vacancy formation and easy oxidization characteristics make Sn²⁺-based perovskites highly p-doped with excessive hole concentrations, which significantly hinder their applications. Herein, we demonstrate a potent hole inhibitor of antimony fluoride (SbF₃), which possesses a higher hole-suppression capability than conventional tin fluoride (SnF₂). A small amount of SbF₃ allows a wide range of hole-density modulation with no or less SnF₂ addition, thus mitigating the negative effects of using only SnF₂. A SnF₂/SbF₃ co-additive approach was further developed to achieve high-performance Sn²⁺ perovskite thin-film transistors operated in the enhancement mode with a five-fold enhancement of the field-effect mobility and improved operational stability compared to using only SnF₂. We expect that the SbF₃ hole suppressor and co-additive approach can provide opportunities for the development of high-efficiency Sn²⁺-perovskite optoelectronic devices.