[Abstract]

In this study, the doping effect of 4-NBD and Br2 molecules on the solution-processed WSe2 thin-film transistors is investigated. Br2-doped WSe2 transistors showed field-effect hole mobility of more than 12 cm2 V-1 s-1, which is 2 orders of magnitude higher than that of the nitrobenzenediazonium tetrafluoroborate (4-NBD)-doped device. Our results indicate that molecule type and size are important to realize effective doping and operational stability on solution-processed WSe2 transistors for future applications in integrated flexible electronics. (Keywords: 2D semiconductor, doping, p-type transistors, CMOS)