Organic Non‐Volatile Memory Based on Pentacene Field‐Effect Transistors Using a Polymeric Gate Electret
- 저자
- Kang-Jun Baeg, Yong-Young Noh, Jieun Ghim, Seok-Ju Kang, Hyemi Lee, and Dong-Yu Kim*
- 저널명
- Advanced Materials, 18, 23, 3179-3183 (2006)
- 년도
- 2006
- Link
- https://doi.org/10.1002/adma.200601434 127회 연결
[Abstract]
An organic field-effect transistor (OFET) memory device based on pentacene is fabricated using an additional poly(α-methyl styrene) gate dielectric layer (PαMS, see figure) that has charge-trapping ability (an electret). The device has excellent non-volatile OFET memory characteristics, believed to originate from the stored charges in PαMS layer and transferred from the semiconductor to the polymeric gate electret.