Organic field-effect transistors by a wet-transferring method
- 저자
- Yong-Young Noh, Jang-Joo Kim, Kiyoshi Yase and Shuichi Nagamatsu
- 저널명
- Applied Physics Letters, 83, 1243–1245 (2003)
- 년도
- 2003
- Link
- http://dx.doi.org/10.1063/1.1600518 119회 연결
Organic ®eld-effect transistors ~OFETs! were prepared from an epitaxially grown ®lm fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum~II! was grown by thermal evaporation on the ~001! surface of potassium bromide ~KBr! single crystals. When the ®lm was grown at room temperature, the planar molecules were aligned orthogonally on the crystal surfaces along the @110# direction with edge-on orientation to the surface normal direction. The epitaxy ®lm was transferred to on SiO2 /Si surface immediately after removing the KBr on the water surface to product the OFETs. The calculated mFET of the OFET for the wet-transferred vertically aligned ®lm were 1.331024 and 2.231024 cm2 V21 s21 at the linear and saturation regions, respectively, at Vg5250Vat anION/IOFF ~on/off ratios of source±drain current! of 104;105.