Publication

Semiconductor Materials and Devices Lab

Paper

  • 2023
  • Neuromorphic computing based on halide perovskites
  • Nature Electronics, 6, 949–962 (2023)
  • Maria Vasilopoulou*, Abd Rashid bin Mohd Yusoff*, Yang Chai, Michael-Alexandros Kourtis, Toshinori Matsushima, Nicola Gasparini, Rose Du, Feng Gao, Mohammad Khaja Nazeeruddin, Thomas D Anthopoulos*, Yong-Young Noh*
Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors
저자
Kang-Jun Baeg, Dongyoon Khim, Juhwan Kim, Dong-Yu Kim, Si-Woo Sung,Byung-Do Yang, and Yong-Young Noh*
저널명
IEEE Electron Device Letters, 34, 1, s126-128 (2013)
년도
2013

[Abstract]

High-performance inkjet-printed top-gate/bottom-contact organic field-effect transistors (OFETs) and complementary electronic circuitry are reported. Blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) dielectrics effectively reduce the operation voltage. At the optimized blend ratio of 7 : 3 wt.% for P(VDF-TrFE) and PMMA, both p- and n-type printed OFETs show well-balanced high field-effect mobility values (~ 0.5 cm 2 /V·s) and low threshold voltages ( ±5 V). The high-performance inverters and various digital logic gates such as nand, nor, or, and xor are demonstrated on flexible plastic substrates. The inverter shows a high gain (>; 25), an ideal inverting voltage near half of the supplied bias (1/2 VDD ), and a high noise immunity (up to 79 % of 1/2 VDD ).