High Performance Organic Field-Effect Transistor with Low-Temperature Processed diF-TESADT Large Crystal for Flexible Electronics
- 저자
- Won-Tae Park, Yong-Young Noh
- 저널명
- Journal of Nanoscience and Nanotechnology, 16, 8 (2016)
- 년도
- 2016
- Link
- http://dx.doi.org/10.1166/jnn.2016.12492 128회 연결
[Abstract]
Here, we report high performance organic field-effect transistors (OFETs) with 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT): poly(triarylamine) (PTAA) blend by achieving high and uniform crystallinity over a large area. OFETs with blended semiconductors show high charge carrier mobility (hole mobility ∼4.6 cm2/V.s) under highly blended conditions at a bending radius = 7.5 mm by both a slow drying of a solvent that can form into large-sized crystals (width: ∼500 um, length: ∼1000 um) and blending with PTAA that provides high flexibility.