Publication

Semiconductor Materials and Devices Lab

Paper

  • 2023
  • Neuromorphic computing based on halide perovskites
  • Nature Electronics, 6, 949–962 (2023)
  • Maria Vasilopoulou*, Abd Rashid bin Mohd Yusoff*, Yang Chai, Michael-Alexandros Kourtis, Toshinori Matsushima, Nicola Gasparini, Rose Du, Feng Gao, Mohammad Khaja Nazeeruddin, Thomas D Anthopoulos*, Yong-Young Noh*
High Performance Organic Field-Effect Transistor with Low-Temperature Processed diF-TESADT Large Crystal for Flexible Electronics
저자
Won-Tae Park, Yong-Young Noh
저널명
Journal of Nanoscience and Nanotechnology, 16, 8 (2016)
년도
2016

[Abstract]

Here, we report high performance organic field-effect transistors (OFETs) with 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT): poly(triarylamine) (PTAA) blend by achieving high and uniform crystallinity over a large area. OFETs with blended semiconductors show high charge carrier mobility (hole mobility ∼4.6 cm2/V.s) under highly blended conditions at a bending radius = 7.5 mm by both a slow drying of a solvent that can form into large-sized crystals (width: ∼500 um, length: ∼1000 um) and blending with PTAA that provides high flexibility.