Large‐scale precise printing of ultrathin sol–gel oxide dielectrics for directly patterned solution‐processed metal oxide transistor arrays
- 저자
- Won-June Lee, Won-Tae Park, Sungjun Park, Sujin Sung, Yong-Young Noh*, Myung-Han Yoon*
- 저널명
- Advanced materials
- 년도
- 2015
- Link
- http://dx.doi.org/10.1002/adma.201502239 151회 연결
[Abstract]
Ultrathin and dense metal oxide gate dielectric layers are reported by a simple printing of AlOx and HfOx sol–gel precursors. Large-area printed indium gallium zinc oxide (IGZO) thin-film transistor arrays, which exhibit mobilities >5 cm2 V−1 s−1 and gate leakage current of 10−9 A cm−2 at a very low operation voltage of 2 V, are demonstrated by continuous simple bar-coated processes.