Publication

Semiconductor Materials and Devices Lab

Paper

  • 2023
  • Neuromorphic computing based on halide perovskites
  • Nature Electronics, 6, 949–962 (2023)
  • Maria Vasilopoulou*, Abd Rashid bin Mohd Yusoff*, Yang Chai, Michael-Alexandros Kourtis, Toshinori Matsushima, Nicola Gasparini, Rose Du, Feng Gao, Mohammad Khaja Nazeeruddin, Thomas D Anthopoulos*, Yong-Young Noh*
Ultrahigh Mobility in Solution‐Processed Solid‐State Electrolyte‐Gated Transistors
저자
Benjamin Nketia‐Yawson, Seok‐Ju Kang, Grace Dansoa Tabi, Andrea Perinot, Mario Caironi, Antonio Facchetti, Yong‐Young Noh*
저널명
Advanced Materials, 29, 16, 1605685 (2017)
년도
2017

[Abstract]

A new concept of a high-capacitance polymeric dielectric based on high-k polymer and ion gel blends is reported. This solid-state electrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm2 V−1 s−1 for common polymer and other semiconductor families at VG ≤ 2 V owing to high areal capacitance (>4 µF cm−2) from combined polarization of CF interface dipoles and electrical-double-layer formation.