Schottky Barrier in Organic Transistors
- 저자
- Yong Xu*, Huabin Sun*, Yong-Young Noh
- 저널명
- IEEE Transactions on Electron Devices, 64, 5, (2017)
- 년도
- 2017
- Link
- https://doi.org/10.1109/TED.2017.2650216 190회 연결
[Abstract]
Organic FETs (OFETs) are essential devices in future flexible electronics. Yet, a crucial issue associated with electronic contact is still unsolved and our fundamental understanding remains very limited. Unlike many other previous reports talking about the contact resistance, in this paper, we specifically discuss its major root: the Schottky barrier, by comparison of the conventional metal-silicon contacts, and the unconventional metal-organic contacts, where the special features in OFETs are underlined. We not only examine the basics of the Schottky barrier but also the extrinsic effects as well as the characterization methods. The key factors in device fabrication are also reviewed in order to minimize the detrimental impacts of the Schottky barrier for obtaining optimum device performance.