Publication

Semiconductor Materials and Devices Lab

Paper

  • 2023
  • Neuromorphic computing based on halide perovskites
  • Nature Electronics, 6, 949–962 (2023)
  • Maria Vasilopoulou*, Abd Rashid bin Mohd Yusoff*, Yang Chai, Michael-Alexandros Kourtis, Toshinori Matsushima, Nicola Gasparini, Rose Du, Feng Gao, Mohammad Khaja Nazeeruddin, Thomas D Anthopoulos*, Yong-Young Noh*
Study of PEDOT and analogous polymer film as back-electron injection barrier and electrical charge storing materials
저자
Iseul Lim, Hoa Thi Bui, Chan Yong Shin, Nabeen K. Shrestha*, Chinna Bathula, Taegweon Lee, Yong-Young Noh, Sung-Hwan Han
저널명
Materials Letters, 211, 1-4 (2018)
년도
2018

[Abstract]

This work reports on back-electron injection barrier property and electrical charge storing behavior of PEDOT film with and without substituted propylene as terminal group. As a barrier layer, thin polymer film is deposited on TiO2 particles of DSSC using photo-induced polymerization route. The same piece of DSSC device is used before and after deposition of polymer thin-film for studying the influence of interfacial treatment. The propylene substituted PEDOT treatment of the device demonstrates an enhanced power conversion efficiency from 4.31 to 5.96% whereas the unsubstituted PEDOT treated device shows only the power conversion enhancement from 4.54 to 5.31%. This finding suggests the higher barrier performance of the propylene substituted PEDOT for back-electron injections. Unlike the barrier performance, the propylene substituted PEDOT shows poorer electrical charge storing behavior with specific capacitance of 63.47 F g−1 whereas the unsubstituted PEDOT film achieved 96.84 F g−1.