Publication

Semiconductor Materials and Devices Lab

Paper

Solution-processed inorganic p-channel transistors: Recent advances and perspectives
저자
Ao Liu, Huihui Zhu, Yong-Young Noh*
저널명
Materials Science and Engineering: R: Reports, 135, 85-100 (2019)
년도
2019

[Abstract]

For decades, inorganic n-type metal-oxide semiconductors have attracted great interest across a wide range of applications due to their excellent electrical property, low cost, high optical transparency, and good ambient stability. The next attention has focused on the development of high-performance p-type semiconductors with comparable opto/electric properties to n-type counterparts. This paper provides a comprehensive overview of recent progress in solution-processed inorganic p-type semiconductors that can be applied as channel layers in thin-film transistors and complementary metal-oxide semiconductor-based integrated circuits. We first introduce conventional p-type oxide semiconductors and review their achievements on related devices. Then, we pay a specific focus on emerging (pseudo)halide materials for realization of transparent, low-temperature and high-performance printable electronics and circuits.